050-7025 rev c 6-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com to-247 d 3 pak apt5014bfll apt5014sfll 500v 35a 0.140 ?? ?? ? characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, 17.5a) zero gate voltage drain current (v ds = 500v, v gs = 0v) zero gate voltage drain current (v ds = 400v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 500 0.140 100500 100 35 apt5014bfll_sfll 500 35 140 3040 403 3.22 -55 to 150 300 3530 1300 lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg to-247 or surface mount d 3 pak package fast recovery body diode power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r fredfet downloaded from: http:///
050-7025 rev c 6-2004 dynamic characteristics apt5014bfll_sfll 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 2.12mh, r g = 25 ? , peak i l = 35a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - 35a di / dt 700a/s v r 500v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and information contained herein. source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -35a) peak diode recovery dv / dt 5 reverse recovery time(i s = -35a, di / dt = 100a/s) reverse recovery charge(i s = -35a, di / dt = 100a/s) peak recovery current(i s = -35a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 35 140 1.3 15 t j = 25c 250 t j = 125c 525 t j = 25c 1.6 t j = 125c 6.0 t j = 25c 13 t j = 125c 21 symbol r jc r ja min typ max 0.31 40 unitc/w characteristicjunction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 550v i d = 35a @ 25c resistive switching v gs = 15v v dd = 550v i d = 35a @ 25c r g = 1.6 ? inductive switching @ 25c v dd = 333v, v gs = 15v i d = 35a, r g = 5 ? inductive switching @ 125c v dd = 333v v gs = 15v i d = 35a, r g = 5 ? min typ max 3261 704 5072 20 36 11 6 23 3 325249 545 288 unit pf nc ns j note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.350.30 0.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
t j = +125c t j = +25c t j = -55c typical performance curves apt5014bfll_sfll r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 15 &10v 5v 5.5v 6v 7v 6.5v 8v v gs =10v v gs =20v v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 0.1190.191 0.0135f0.319f power (watts) rc model junctiontemp. ( c) case temperature. ( c) 100 8060 20 20 0 1.2 1.151.10 1.05 1.0 0.950.90 1.15 1.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 normalized to v gs = 10v @ 17.5a i d = 17.5a v gs = 10v 050-7025 rev c 6-2004 100 8060 40 20 0 3530 25 20 15 10 50 2.52.0 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 0123456789 0 1 02 03 04 05 06 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 downloaded from: http:///
apt5014bfll_sfll typical performance curves v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 500 0 10 20 30 40 50 0 20 40 60 80 100 0.3 0.5 0.7 0.9 1.1 1.3 1.5 140 5010 1 1614 12 10 86 4 2 0 10,000 1,000 100 10 200100 5010 51 v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage t j =+150c t j =+25c c rss c iss c oss 10ms 1ms 100s t c =+25c t j =+150c single pulse operation here limited by r ds (on) v ds =250v v ds =100v v ds =400v i d = 35a i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 333v r g = 5 ? t j = 125c l = 100h e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 01 02 03 04 05 06 0 01 02 03 04 05 06 0 01 02 03 04 0 5 06 0 051 01 52 02 53 03 54 04 55 0 v dd = 333v i d = 35a t j = 125c l = 100h e on includes diode reverse recovery. t d(on) t d(off) e on e off 6050 40 30 20 10 0 1000 800600 400 200 0 v dd = 333v r g = 5 ? t j = 125c l = 100h v dd = 333v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. 7060 50 40 30 20 10 0 14001200 1000 800600 400 200 0 050-7025 rev c 6-2004 downloaded from: http:///
apt5014bfll_sfll 15.49 (.610)16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. to - 247 package outline 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 3.81 (.150)4.06 (.160) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 d 3 pak package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. 050-7025 rev c 6-2004 figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions t j = 125 c 90% 90% t f t d(off) 10% 0 drain current gate voltage drain voltage switching energy t j = 125 c 10 % t d(on) drain current drain voltage gate voltage 10 % 5 % 90% t r switching energy i c d.u.t. apt30df60 v ce figure 20, inductive switching test circuit v dd g apt30df60 downloaded from: http:///
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